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| PD - 94858 IRG4PC50WPBF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free C VCES = 600V G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n-channel Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz) Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Absolute Maximum Ratings TO-247AC Max. 600 55 27 220 220 20 170 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.24 6 (0.21) Max. 0.64 40 Units C/W g (oz) www.irf.com 1 11/26/03 IRG4PC50WPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage 0.41 V/C VGE = 0V, IC = 5.0mA 1.93 2.3 IC = 27A VGE = 15V Collector-to-Emitter Saturation Voltage 2.25 IC = 55A See Fig.2, 5 V 1.71 IC = 27A , TJ = 150C Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, IC = 1.0mA Forward Transconductance 27 41 S VCE = 100 V, IC = 27A 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t d(on) tr t d(off) tf E ts LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 180 270 IC = 27A 24 36 nC VCC = 400V See Fig.8 63 95 VGE = 15V 46 33 TJ = 25C ns 120 180 IC = 27A, VCC = 480V 57 86 VGE = 15V, RG = 5.0 0.08 Energy losses include "tail" 0.32 mJ See Fig. 9, 10, 14 0.40 0.5 31 TJ = 150C, 43 IC = 27A, VCC = 480V ns 210 VGE = 15V, RG = 5.0 62 Energy losses include "tail" 1.14 mJ See Fig. 10,11, 14 13 nH Measured 5mm from package 3700 VGE = 0V 260 pF VCC = 30V See Fig. 7 68 = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC50WPBF 100 For both: Triangular wave: 80 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Load Current ( A ) Power Dissipation = 40W Clamp voltage: 80% of rated 60 Square wave: 60% of rated voltage 40 20 Ideal diodes 0 0.1 1 10 100 A 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) 100 100 TJ = 150 C TJ = 150 C TJ = 25 C TJ = 25 C 10 10 1 V GE = 15V 20s PULSE WIDTH 1 10 1 V CC = 50V 5s PULSE WIDTH 5 6 7 8 9 10 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC50WPBF 60 3.0 50 40 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) IC = 54 A 2.0 30 IC = 27 A IC =13.5 A 20 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50WPBF 8000 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 27A C, Capacitance (pF) 6000 16 Cies 4000 12 8 2000 Coes Cres 4 0 1 10 0 VCE , Collector-to-Emitter Voltage (V) 0 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 27A 10 RG = Ohm 5.0 VGE = 15V VCC = 480V IC = 54 A 2.0 1 IC = 27 A IC = 13.5 A 1.0 0.0 0 R , Gate Resistance ) RG G , GateResistance ((Ohm) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC50WPBF 3.0 2.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE = Ohm 5.0 = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 1.0 10 0.0 0 10 20 30 40 50 60 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC50WPBF L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X I C@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4PC50WPBF TO-247AC Package Outline 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) C AS 2.60 (.102) 2.20 (.087) Dimensions are shown in millimeters (inches) -D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 8 www.irf.com |
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